power ring film capac itors tm at the leading edge of film capacitor technology ? sbe part 700D108911-628 sbe reserves the right to amend design data power ring film capacitor? 1000 f, 1100 vdc the 700D108911-628 power ring is a 1100vdc, 1000 f dc link capacitor with an esr of 375 micro-ohms at 20khz and an esl of less than 15nh. electrical specifcations sbe part #: 700D108911-628 capacitance/tolerance: 1000 f 10% dc voltage ratng: 1100 v dc dielectric/constructon : me tallized polypropylene. single secton design dielectric withstand: units 100% t ested at dc potental of 1300 volts for tw o minutes at 25 c typical esr vs. frequency: esl: less than 15 nh in a suit able laminar bus s tructure operatng temperature: -40 c to +85 c at full dc voltage ratng voltage, temperature contact sbe for applicatons de-ratng: abo ve 85 c system fault current 10,000 amps maximum ratng (external to the capacitor): rms current ratng: 0 100 200 300 400 500 600 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 maximum ripple current (a rms) case temperature ( o c) case side cooling case and bus side cooling 700d628 with 20 khz ripple current temperature rise due to capacitor losses only bus heat load not included 0 0.2 0.4 0.6 0.8 1 1.2 0.01 0.1 1 10 100 esr, milliohms frequency, khz esr vs frequency
power ring film capac itors tm sbe inc. 81 parker road telephone: 802.476.4146 web site: www.sbelectronics.com barre, vermont 05641 usa fax: 802.661.3950 e-mail: powerring@sbelectronics.com sbe part 700D108911-628 sbe reserves the right to amend design data thermal specifcations here are two representatons of capacitor surface temperature over time for two specifc thermal resistances of 1c/w and 0.5c/w. notes regarding these graphs: ? the thermal resistance is that from capacitor to applicaton. this is a functon of the applicaton environment, not the capacitor itself. ? the capacitor can handle extreme current for small duty ratos. trise occurs very slowly. this is because the capacitor has a high specifc heat. ? these charts can be adapted for other currents by multplying y axis values for any tme by (iapp/254)2 ? internal capacitor trise is added to the capacitor surface/terminal temperature. ? terminals are assumed to be at case temperature. mechanical specifcations dimensions: refer to layout details terminals: tin pla ted copper, 0.032 thick. encapsulaton: molded polymer case, poted with rtv marking: sbe sbe company identfcaton 700d628 sbe short form part number 1000 f 10% capacit ance value and tolerance 1100 vdc dc voltage ratng yyww-lot#-unit 12-digit serial number (date code, lot number, unit number) sample 1. capacitor surface temperature rise above applicaton environment @ 207 amps rms current load, 10 khz. thermal resistance = 0.5c/w: sample 2. capacitor surface temperature rise above applicaton environment @ 207 amps rms current load, 10 khz. thermal resistance = 1c/w: 25 26 27 28 29 30 31 32 33 34 0 5000 10000 15000 20000 25000 temperature degrees c time in seconds capacitor surface temperature cap at uniform temperature 24.5 25 25.5 26 26.5 27 27.5 28 28.5 29 0 2000 4000 6000 8000 10000 12000 temperature degrees c time in seconds capacitor surface temperature cap at uniform temperature
power ring film capac itors tm at the leading edge of film capacitor technology ? sbe part 700D108911-628 sbe reserves the right to amend design data mechanical mountng and additonal thermal notes: this capacitor is optmized for extremely low self inductance when connected to a suitable laminar bus structure. when so connected, the capacitor is very rigidly atached to such a structure and thus does not necessarily need to be mounted to a chassis. however, the capacitor case can be atached to an applicaton surface/heat sink, etc. if desired. when so mounted, the capacitor can be part of the bus structure sup - port. use of thermal interface compound between the capacitor case and applicaton surface/heat sink will assist with removal of capacitor and bus heat. note that the capacitor internal heatng is very small, and other bus structure heat sources are very likely signifcantly higher than the heat added to the bus by the capacitor. capacitor dissipaton is approximately 7.5w at 207arms, from 1-100khz. it is highly recom - mended to use infrared thermal imaging from a system cold start to determine the locaton and relatve mag - nitude of thermal input to the bus. the capacitor may well functon as a thermal conduit for bus structure heat, and it will be very possible that the capacitor internal hot spot is less than the terminal temperature. thermal contour maps are available for some repre - sentatve conditons. layout details: 10.945 bolt circle 16x m5x0.8 - 6h thru 28 in-lbs max torque 4x .197.005 thru all 10.000 8.494 bolt circle 10.321 bolt circle 7x 45.0 a .020 a b c .020 a b c (accepts 1/4" plastite screw) (40 in-lbs max torque) b c .221 2.721 .040 16 surfaces a .259 1.000 accepts 1/4" plastite screw 40 in-lbs max torque 1.000 .500 .280 .663 detail a revisions rev. description chg by chk by apr by date 01 initial release - - - - finish do not scale drawing 8/8/2013 msb unless otherwise specified: all dimensions are in inches checked drawn material geometric tolerancing per: y14.5-2009 eng appr. non-toleranced dimensions are basic agh 8/8/2013 sheet 1 of 1 title power ring film capacitor, 1000f, 1100vdc size a rev sbe, inc. 81 parker road barre, vt 05641 usa 802.476.4146 fax: 802.661.3950 proprietary and confidential the information contained in this drawing is the sole property of sbe. any reproduction in part or as a whole without the written permission of sbe is prohibited. 01 700d628lv .030 a b c mgs dwg. no. 8/7/2013
power ring film capac itors tm sbe inc. 81 parker road telephone: 802.476.4146 web site: www.sbelectronics.com barre, vermont 05641 usa fax: 802.661.3950 e-mail: powerring@sbelectronics.com sbe part 700D108911-628 sbe reserves the right to amend design data advantages of power ring dc link capacitors ? ability to handle higher ripple currents with less capacitance, weight, and volume ? service life of > 200,000 hours for realistc operatng conditons, due to lower losses and beter thermal performance ? minimizaton of igbt overshoot and eliminaton of the need for additonal snubber capacitors ? most efectve isolaton of dc storage or supply from ac switching artfacts ? lowest industry esl at <5nh typical with a properly integrated bus structure ? smaller inverter packaging ? overall system cost savings ? capacitance from 400 f to 2500 f and voltages from 250 vdc to 1200 vdc the sbe power ring film capacitors? utlize traditon - ally available and economical polypropylene and poly - ester capacitor dielectric flms. however, the power of the shape ? allows for both thermal and electrical performance which has been unachievable in the flm capacitor industry to date. power ring system performance the combinaton of lowest available trise, esr and esl coupled with highest ripple current handling capability enable the development of industry leading inverter designs with unbeatable performance and reliability. lowest available trise for a given ripple current lowest available esl, less than 5nh demonstrated with optmal integrated bus lowest available esr, less than 150 micro-ohms typical crown terminal architecture provides for a multtude of current paths which allows the monolithic capacitor to functon as a distributed element with a much lower esr than an equivalent array of smaller parts. sbe has developed a next generaton capacitor simulaton tool that allows accurate calculaton of hotspot tempera - ture to allow optmal ratng with excellent reliability. integratng the power ring in an existng design the stacked inverter design evolves from modifying a typical automotve inverter by utlizing the excess space lef above the igbt module (fgure 1). by bend - ing the end of the laminar bus plate, the ibgt, die, cooling plate, and the ring capacitor are stacked on top of each other in a symmetrical fashion. the ring capacitor is placed underneath the cooling plate. the cooling plate is shared with the igbt module which is mounted on the top. figure 1 figure 2 figure 2 shows the stacked inverter design afer the integraton of the ring capacitor and the laminar bus plate. by now combining both aspects of vertcal inte - graton and the low temperature rise characteristcs of the capacitors, an increase to 50% or more volume reducton is realistcally possible. these improvements clearly translate into weight and cost reductons. #sbe-pr-628-10/13
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